PART |
Description |
Maker |
K6F1016U4B K6F1016U4B-F K6F1016U4B-FF55 K6F1016U4B |
64K X 16 STANDARD SRAM, 55 ns, PBGA48 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
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SAMSUNG[Samsung semiconductor]
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EM6160FV32BW-10L EM6160V32BW-10L EM6161FV32BW-10L |
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc Emerging Memory & Logic Sol...
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EM646FV16FU |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
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Emerging Memory & Logic Solutions
|
DS_K6F8016U6C |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG[Samsung semiconductor]
|
EM646FV16FU |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc
|
K6F1616T6B-TF70 K6F1616T6B-TF55 K6F1616T6B K6F1616 |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM 100万x16位超低功耗和低电压的CMOS静态RAM
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic http://
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HY62SF16804B HY62SF16804B-C HY62SF16804B-DFC HY62S |
RES, 33, 1/2W, TKF, 5%, 2010 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM
|
Hynix Semiconductor Inc.
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K6F8016V3A K6F8016V3A-F K6F8016V3A-TF55 K6F8016V3A |
512K X 16 STANDARD SRAM, 55 ns, PDSO44 From old datasheet system 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K6F1616U6A K6F1616U6A-EF55 K6F1616U6A-EF70 K6F1616 |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung semiconductor
|
HY62LF16806A-SMC HY62LF16806A-DMC HY62LF16806A-DMI |
x16|2.5V|70/85/100|Super Low Power Slow SRAM - 8M x16 | 2.5V的| 70/85/100 |超级低功耗SRAM的速度 800 512Kx16bit full CMOS SRAM
|
Alpha Industries, Inc. Hynix Semiconductor
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